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| FDW2507N March 2003 FDW2507N Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. Features * 7.5 A, 20 V. RDS(ON) = 19 m @ VGS = 4.5 V RDS(ON) = 23 m @ VGS = 2.5 V * Isolated source and drain pins * High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V * Low profile TSSOP-8 package Applications * Li-Ion Battery Pack D D D D G2 S2 G1 S1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 Units V V A W 12 (Note 1a) 7.5 30 1.6 1.1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 77 114 C/W C/W Package Marking and Ordering Information Device Marking 2507N Device FDW2507N Reel Size 13'' Tape width 12mm Quantity 3000 units 2003 Fairchild Semiconductor Corporation FDW2507N Rev C2 FDW2507N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V, VGS = 0 V VDS = 0 V VDS = 0 V -13 1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 7.5 A VGS = 2.5 V, ID = 6.8 A VGS = 4.5 V, ID = 7.5 A, TJ=125C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 7.5 A 0.6 0.8 4 15 17 20 1.5 V mV/C 19 23 27 m ID(on) gFS 30 31 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 2152 512 263 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 12 13 35 19 22 23 56 34 28 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 7.5 A, 20 3 5 Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage Diode Reverse Recovery Time IF = 7.5A diF/dt = 100 A/s Diode Reverse Recovery Charge 1.3 (Note 2) A V nS nC 0.6 26 1.2 (Note 2) 21 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 77C/W when mounted on a 1in2 pad of 2 oz copper b) 114C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDW2507N Rev C2 FDW2507N Typical Characteristics 20 VGS = 4.5V ID, DRAIN CURRENT (A) 15 3.5V 2.0V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 VGS = 2.0V 1.4 10 1.5V 5 1.2 2.5V 3.0V 3.5V 4.5V 1 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 5 10 ID, DRAIN CURRENT (A) 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.04 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 7.5A VGS = 4.5V 1.4 ID = 3.8A RDS(ON), ON-RESISTANCE (OHM) 0.035 1.2 0.03 TA = 125oC 0.025 0.02 1 0.8 TA = 25oC 0.015 0.6 -50 -25 0 25 50 75 100 o 125 150 0.01 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 30 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V 25 ID, DRAIN CURRENT (A) TA = -55oC 125oC 25oC VGS = 0V 10 TA = 125oC 1 20 15 10 5 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2507N Rev C2 FDW2507N Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 7.5A 4 15V 3 CAPACITANCE (pF) VDS = 5V 10V 3000 2500 CISS 2000 1500 1000 500 CRSS 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) COSS f = 1MHz VGS = 0 V 2 1 Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC VGS = 4.5V SINGLE PULSE RJA = 114oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 100us P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 114C/W TA = 25C 30 1 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 RJA(t) = r(t) + RJA RJA =114 C/W P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2507N Rev C2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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